STP11NM80
Power MOSFET, N Channel, 800 V, 11 A, 0.4 ohm, TO-220, Through Hole
Potrebujete viac?
| Množstvo | |
|---|---|
| 1+ | 4,630 € |
| 10+ | 3,260 € |
| 100+ | 3,130 € |
| 500+ | 2,760 € |
| 1000+ | 2,750 € |
INFORMÁCIE O PRODUKTE
Prehľad produktu
The STP11NM80 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offers extremely low ON-resistance, high dV/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
- Low gate input resistance
Aplikácie
Industrial, Power Management
Upozornenia
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technické údaje
N Channel
11A
TO-220
10V
150W
150°C
-
800V
0.4ohm
Through Hole
4V
3Pins
-
No SVHC (21-Jan-2025)
Technické dokumenty (2)
Alternatívy pre STP11NM80
Našlo sa 3 produktov
Súvisiace produkty
Počet nájdených produktov: 1
Legislatíva a životné prostredie
Krajina, v ktorej boli vykonané posledné úpravy pred uvedením do predajaKrajina pôvodu:China
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RoHS
RoHS
Certifikát zhody produktu