CY62146ESL-45ZSXI

CY62146ESL-45ZSXI is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (active-low CE HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), both byte high enable and byte low enable are disabled (active-low BHE, active-low BLE HIGH) or during a write operation (active-low CE LOW and active-low WE LOW).

• Very high speed: 45ns
• Maximum standby current is 7µA
• Typical active current is 3.5mA at f=1MHz
• Easy memory expansion with active-low CE and active-low OE features
• Automatic power down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• Vcc range from 2.2V to 3.6V and 4.5V to 5.5V
• VCC for data retention is 1.5V
• 44-pin TSOP Type II package
• Industrial ambient temperature range from -40°C to +85°C