IRFB4229PBF
Power MOSFET, N Channel, 250 V, 46 A, 0.046 ohm, TO-220AB, Through Hole
Potrebujete viac?
| Množstvo | |
|---|---|
| 1+ | 3,020 € |
| 10+ | 2,900 € |
| 100+ | 1,470 € |
| 500+ | 1,200 € |
| 1000+ | 1,190 € |
INFORMÁCIE O PRODUKTE
Prehľad produktu
The IRFB4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
- Advanced process technology
- Low Qg for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
Aplikácie
Audio, Consumer Electronics, Power Management
Upozornenia
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technické údaje
N Channel
46A
TO-220AB
10V
330W
175°C
-
No SVHC (21-Jan-2025)
250V
0.046ohm
Through Hole
5V
3Pins
-
-
Technické dokumenty (3)
Legislatíva a životné prostredie
Krajina, v ktorej boli vykonané posledné úpravy pred uvedením do predajaKrajina pôvodu:China
Krajina, v ktorej boli vykonané posledné úpravy pred uvedením do predaja
RoHS
RoHS
Certifikát zhody produktu