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Množstvo | |
---|---|
1+ | 1,320 € |
10+ | 0,923 € |
100+ | 0,702 € |
500+ | 0,566 € |
1000+ | 0,520 € |
5000+ | 0,446 € |
INFORMÁCIE O PRODUKTE
Prehľad produktu
The IRFR5410TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Aplikácie
Automotive, Power Management
Upozornenia
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technické údaje
P Channel
13A
TO-252AA
10V
66W
150°C
-
No SVHC (21-Jan-2025)
100V
0.205ohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technické dokumenty (3)
Alternatívy pre IRFR5410TRPBF
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Legislatíva a životné prostredie
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RoHS
RoHS
Certifikát zhody produktu