IRLR2908TRPBF
Power MOSFET, N Channel, 80 V, 30 A, 0.028 ohm, TO-252AA, Surface Mount
2 000 Teraz si môžete rezervovať tovar na sklade.
| Množstvo | |
|---|---|
| 5+ | 1,460 € |
| 50+ | 1,000 € |
| 100+ | 0,773 € |
| 500+ | 0,616 € |
| 1000+ | 0,568 € |
INFORMÁCIE O PRODUKTE
Prehľad produktu
The IRLR2908TRPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
- Logic level
Aplikácie
Power Management
Technické údaje
N Channel
30A
TO-252AA
10V
120W
175°C
-
No SVHC (21-Jan-2025)
80V
0.028ohm
Surface Mount
2.5V
3Pins
-
MSL 1 - Unlimited
Technické dokumenty (2)
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Krajina, v ktorej boli vykonané posledné úpravy pred uvedením do predajaKrajina pôvodu:China
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RoHS
RoHS
Certifikát zhody produktu